Ion Beam Induced Strain Relaxation in Pseudomorphous Epitaxial SiGe Layers
نویسندگان
چکیده
A.F. Vyatkin, V.S. Avrutin, N.F. Izyumskaya, V.K. Egorov, V.V. Starkov, V.I. Zinenko, Institute of Microelectronics Technology, RAS, 142432, Moscow distr., Chemogolovka, Russia LA. Smimova, Institute of Solid State Physics, RAS, 142432, Moscow distr.,Chernogolovka, Russia P.L.F. Hemment, A. Nejim, University of Surrey, Guilford, UK V.I. Vdovin, Institute for Chemical Problems of Microelectronics, Moscow, Russia and T.G. Yugova Institute of Rare Metals, Moscow, Russia
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